IXTP2N65X2

IXYS
747-IXTP2N65X2
IXTP2N65X2

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 650V 2A N-CH X2CLASS

Hoja de datos:
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En existencias: 220

Existencias:
220 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
41 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/ -.--
Precio ext.:
S/ -.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
S/ 15.27 S/ 15.27
S/ 7.74 S/ 77.40
S/ 7.70 S/ 770.00
S/ 5.68 S/ 2,840.00
S/ 4.95 S/ 4,950.00

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
2 A
2.3 Ohms
- 30 V, 30 V
3 V
4.3 nC
- 55 C
+ 150 C
55 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: KR
Tiempo de caída: 14 ns
Transconductancia hacia delante - Mín.: 1.1 S
Tipo de producto: MOSFETs
Tiempo de subida: 19 ns
Serie: X2-Class
Cantidad de empaque de fábrica: 50
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 20 ns
Tiempo típico de demora de encendido: 15 ns
Peso de la unidad: 2 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

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