STMicroelectronics El/los MOSFETs de SiC más reciente(s)
Filtros aplicados:
Su búsqueda dentro de los Productos más recientes no obtuvo ningún resultado.
Cambie sus filtros e intente nuevamente.
Cambie sus filtros e intente nuevamente.
Littelfuse MOSFET de potencia SiC de 1200 V IXSJxN120R1
06/23/2025
06/23/2025
High-performance devices designed for demanding power conversion applications.
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs
06/03/2025
06/03/2025
Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05/22/2025
05/22/2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
APC-E Silicon Carbide (SiC) MOSFETs
05/06/2025
05/06/2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Wolfspeed 1700V Silicon Carbide MOSFETs
04/17/2025
04/17/2025
Offers higher switching, system efficiency, and power density for next-generation power conversion.
IXYS MOSFET SiC IXSA80N120L2-7
03/06/2025
03/06/2025
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
IXYS MOSFET SiC IXSA40N120L2-7
03/06/2025
03/06/2025
Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETs
02/20/2025
02/20/2025
Designed for fast switching applications, offering reliable performance.
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETs
02/20/2025
02/20/2025
Deliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFET
02/18/2025
02/18/2025
Offers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications
IXYS MOSFET SiC IXSH40N120L2KHV
02/18/2025
02/18/2025
1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS MOSFET SiC IXSH80N120L2KHV
02/18/2025
02/18/2025
1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09/06/2024
09/06/2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).
Micro Commercial Components (MCC) MOSFET de canal N SiC de 1200 V SICW0x
09/03/2024
09/03/2024
Amplifican el rendimiento en paquetes versátiles TO-247-4, TO-247-4L y TO-247AB.
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Developed using a proprietary trench-assisted planar technology for high-speed performance.
Micro Commercial Components (MCC) MOSFET de carburo de silicio (SiC) SICWx
09/03/2024
09/03/2024
MOSFET de SiC de 650 V con capacidad de conmutación de alta velocidad, que se incluyen en paquete TO-247.
Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs
08/28/2024
08/28/2024
Specially developed for use in the AC/DC stage of AI server PSUs and solar/energy storage systems.
Vishay MXP120A MaxSiC™ 1200V N-Channel MOSFETs
08/26/2024
08/26/2024
Feature fast switching speed, 3μs short circuit withstand time, and 139W maximum power dissipation.
onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET
08/14/2024
08/14/2024
Offers an M3S planar technology for fast-switching applications in a D2PAK-7L package.
onsemi NTH4L018N075SC1 N-Channel SiC MOSFET
08/14/2024
08/14/2024
Low ON resistance, 750V M2 EliteSiC MOSFET available in a compact TO247-4L package.
onsemi NTH4L023N065M3S SiC MOSFET
08/06/2024
08/06/2024
Offers a 650V blocking voltage rating, 153pF output capacitance, and a TO-247-4L package.
Micro Commercial Components (MCC) DC Fast Charging Solutions
08/01/2024
08/01/2024
Supports EVs with high-performance components designed for speed, safety, and system efficiency.
Diotec Semiconductor DIF065SIC0x0 Silicon Carbide (SiC) MOSFETs
07/26/2024
07/26/2024
Offers fast switching times and reduced noise levels in a SiC-wide bandgap material.
Wolfspeed MOSFET de potencia de SiC de 1,200 V y bajo perfil TO-247-4
07/03/2024
07/03/2024
Ofrecen alta eficiencia del sistema, reducen las pérdidas de conmutación y minimizan el retardo de puerta.
Viendo: 1 - 25 de 85
