IXYK110N120A4

IXYS
747-IXYK110N120A4
IXYK110N120A4

Fabricante:

Descripción:
IGBTs TO264 1200V 110A GENX4

Hoja de datos:
Modelo ECAD:
Descargue Library Loader gratis para convertir este archivo para su herramienta ECAD. Conozca más sobre el modelo ECAD.
Más información
Conozca más sobre IXYS IXYK110N120A4

En existencias: 148

Existencias:
148 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
32 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/ -.--
Precio ext.:
S/ -.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
S/ 120.01 S/ 120.01
S/ 91.85 S/ 918.50
S/ 82.00 S/ 8,200.00
S/ 81.79 S/ 40,895.00

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: IGBTs
RoHS:  
Si
TO-264-3
Through Hole
Single
1.2 kV
1.8 V
- 20 V, 20 V
375 A
1.36 kW
- 55 C
+ 175 C
Trench
Tube
Marca: IXYS
Máx. corriente continua Ic del colector: 900 A
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: KR
Corriente de fuga puerta-emisor: 200 nA
Tipo de producto: IGBT Transistors
Cantidad de empaque de fábrica: 25
Subcategoría: IGBTs
Nombre comercial: XPT
Productos encontrados:
Para mostrar productos similares, seleccione al menos una casilla de verificación
Seleccione al menos una de las casillas de verificación anteriores para mostrar productos similares en esta categoría.
Atributos seleccionados: 0

Hoja de datos

Esta funcionalidad requiere que JavaScript esté habilitado.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

650V XPT™ High Speed Trench IGBTs

IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10μs Short Circuit Safe Operating Area (SCSOA).

IXYx110N120A4 1200V XPT™ GenX4™ Trench IGBTs

IXYS IXYx110N120A4 1200V XPT™ GenX4™ Trench IGBTs are high-gain IGBTs optimized for ultra-low conduction losses VCE(sat) and for switching frequencies of up to 5kHz. Thin wafer technology and improved processes enable a low gate charge QG, hence, low gate-current requirement. High gain boosts surge current capability, and the positive thermal co-efficient of VCE(sat) simplifies paralleling. The low thermal resistance of Rth(j-c) eases thermal-related design issues. 

Off-Highway Electric Vehicle Solutions

Littelfuse provides a wide range of solutions for off-highway electric vehicles. These electric vehicles share a similar architecture and have a power range from 48V to 400V. Off-highway electric vehicles include electric forklifts, golf carts, three-wheelers, tow tractors, compactors, and excavators.

AC/DC Power Supply

Littelfuse AC/DC Power Supply is a commonly used building block in electronic designs. The components in these power supply building blocks need to be reliable and long-lasting, and Littelfuse offers a range of products that fit those requirements. This portfolio of components covers overcurrent and overvoltage protection, the power stage, and output protection. Typical applications for Littelfuse AC/DC Power Supply products include automotive, solar, industrial, manufacturing, and more.

Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low VSAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Se ha producido un error inesperado.


¿Tiene alguna pregunta? Visite el Centro de ayuda.
Si tiene preguntas sobre un pedido específico, inicie sesión en su cuenta.

Si tiene más problemas, comuníquese con nosotros al 800-346-6873 o envíe un correo electrónico a help@mouser.com.