FFSP1265A

onsemi
863-FFSP1265A
FFSP1265A

Fabricante:

Descripción:
Diodos Schottky de SiC 650V 12A SIC SBD

Hoja de datos:
Modelo ECAD:
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En existencias: 804

Existencias:
804 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
15 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
S/16.56 S/16.56
S/10.66 S/106.60
S/9.93 S/993.00
S/9.63 S/4,815.00

Atributo del producto Valor de atributo Seleccionar atributo
onsemi
Categoría de producto: Diodos Schottky de SiC
RoHS:  
Through Hole
TO-220-2
Single
12 A
650 V
1.5 V
70 A
200 uA
- 55 C
+ 175 C
FFSP1265A
Tube
Marca: onsemi
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: CN
Dp - Disipación de potencia : 115 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 50
Subcategoría: Diodes & Rectifiers
Nombre comercial: EliteSiC
Vr - Tensión inversa: 650 V
Peso de la unidad: 2 g
Productos encontrados:
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Atributos seleccionados: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
MXHTS:
8541100101
ECCN:
EAR99

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

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