IXTP12N70X2M

IXYS
747-IXTP12N70X2M
IXTP12N70X2M

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 700V 12A N-CH X2CLASS

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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
41 Semanas Tiempo estimado de producción de fábrica.
Se establece un tiempo de entrega prolongado para este producto.
Mínimo: 1   Múltiples: 1
Precio unitario:
S/-.--
Precio ext.:
S/-.--
Est. Tarifa:

Precio (PEN)

Cantidad Precio unitario
Precio ext.
S/25.76 S/25.76
S/18.02 S/180.20
S/12.64 S/1,264.00
S/11.40 S/5,700.00

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
700 V
12 A
300 mOhms
- 30 V, 30 V
2.5 V
- 55 C
+ 150 C
180 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: KR
Tiempo de caída: 27 ns
Transconductancia hacia delante - Mín.: 7 S
Tipo de producto: MOSFETs
Tiempo de subida: 30 ns
Cantidad de empaque de fábrica: 50
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 78 ns
Tiempo típico de demora de encendido: 24 ns
Peso de la unidad: 2 g
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Atributos seleccionados: 0

Hoja de datos

PCN

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

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